양 전 욱 교수님
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학력
학사광운대학교 전자공학
석사연세대학교 전자공학(반도체)
박사연세대학교 전자공학(반도체소자)
석사연세대학교 전자공학(반도체)
박사연세대학교 전자공학(반도체소자)
경력
- 1998 ~ 현재 : 전북대학교 전임강사, 조교수, 부교수
- 2004 ~ 2006. 4 : 전북대학교 자연과학대학 반도체과학기술학과장
- 1984 ~ 1998 : 한국전자통신연구원 책임연구원
- 2004 ~ 2006. 4 : 전북대학교 자연과학대학 반도체과학기술학과장
- 1984 ~ 1998 : 한국전자통신연구원 책임연구원
연구업적
1) Chang Seok Oh, Tai Hong Kim, Kee Young Lim and Jeon Wook Yang* “GaN etch enhancement in inductively coupled BCl3 plasma with the addition of N2 and SF6 gas”, Semicond. Sci. Technol., V.19, 2, 172-175 (2004)
2) M. Sentil Kumar, T. H. Kim, S. H. Lee, S. M. Song, J. W. Yang, K. S. Nahm, E.-K. Suh*, “Influence of electric field type on the assembly of single walled carbon nanotubes", Chemical Physics Letters, Vol.383, pp.235-239 (2004)
3) T.S.Jeong, C.J.Youn*, M.S.Han, J.W.Yang, and K.Y.Lim, "Electric field induced quenching effect of Ramann scattering in Mg-doped p-GaN", Applied Phys Lett., vol.83, No.17, pp.3483~3485 (2003)
4) T.S.Jeong*, C.J.Youn, M.S.Han, J.W.Yang, K.Y.Lim, "Analysis of Mg-related emissions in p-GaN grown by MOCVD", J. of Crystal Growth, vol.259, pp.267~272 (2003)
5) C.J.Youn*, T.S.Jeong, M.S.Han, J.W.Yang, K.Y.Lim, H.W.Yu,"Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs", J. of Crystal Growth, vol.250, pp.331~338 (2003)
6) M. Sentil Kumar, S. H. Lee, T. Y. Kim, T. H. Kim, S. M. Song, J. W. Yang, K. S. Nahm, E.-K. Suh*, "DC electric field alignment of carbon natubes on metal electrodes", Solid-State Electronics, Vol.47, pp.2075-2080 (2003)
7) T.Y.Kim, S.H.Lee, Y.H.Mo, H.W.Shim, K.S.Nahm*, E.-K.Suh, J.W.Yang, K.Y.Lim, G.S.Park, "Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor", J. of crystal growth, Vol.257, pp.97-103 (2003)
8) Y.H. Song, J.-H. Kim, H.J. Jang, S.R. Joon, J.W. Yang, K.Y. Lim, and G.M. Yang*, "Effect of Al pre-seeded AlN buffer on GaN films grown on Si(111) substrates" , J. of the Korean Physical Society, V.41,6, 880-883 (2002)
9) C.J.Youn*, T.S.Jeong, M.S.Han, J.W.Yang, K.Y.Lim, and H.W.Yu, "Optical Degradation of InGaN/GaN Multi Quantum Well LED Structures Induced by the Mg-Doped p-GaN Activation Temperature", J. of the Korean Physical Society,Vol.41, No.5, pp.778~782 (2002)
10) J. W. Seo, C. S. Oh, H. S. Jeong, J. W. Yang*, C. J. Youn, and K. Y. Lim "UV-Assisted Electrochemicla Oxidation of GaN". J. of the Korean Physical Society,Vol.41, No.6, pp.1017~1020 (2002)
11) J. W. Seo, C. S. Oh, H. S. Jeong, J. W. Yang*, K. Y. Lim, C. J. Youn, and H. J. Lee,“ Bias-Assisted Photoelectrochemcial Oxidation of n-GaN in H2O”, Applied Phys Letters, V.81, 6, 1029-1031 (2002)
12) C. S. Oh, J. W. Seo, J. W. Yang*, H. G. Ahn, J. K. Mun, and H. K. Kim, "Selective Si interdiffusion into ion implanted GaAs from SiN and its application to GaAs MESFET", Electronics Letters, Vol.38, No.9, pp.432-434 (2002)
13) Seong-Ran Jeon, Chang Sok Oh, Jeon-Wook Yang, and Gye Mo Yang*, Byeong-Su Yoo, "GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode", Appl. Phys. Lett., Vol.80, No.11, pp. 1933-1935 (2002)
14) Jae Won Seo, Chang Suck Oh, Jeon Wook Yang*, Chang Ju Youn, Kee Young Lim, and Hyung Jae Lee, "Allowable Substrate Bias for the Etching of n-GaN in Photoenhanced Electrochemical Etching ", Phys. Stat. Sol. (a) Vol.188, 403-406 (2001)
15) J.H.Kang, M.K.Kwon, J.I.Rho, J.W.Yang, K.Y.Lim*, and K.S.Nahm"Growth and Charcaterization of GaN epilayers on Chemically Etched Surface of 3C-SiC Intermediate Layer grown on Si(111) substrate", Phys. Stat. Sol.(a), Vol.188. No.2, pp.527-530 (2001)
16) Jae Won Seo, Chang Suck Oh, Jeon Wook Yang*, Chang Ju Youn, Kee Young Lim, and Hyung Jae Lee, "Photoenhanced Electrochemical Etching of n-GaN Forced by Negative Bias", Jpn. J. Appl. Phys. Vol.40, pp. 1086-1088 (2001)
17) Y. H. Song, J. -H. Kim, H. J. Jang, S. R. Joon, J. W. Yang, K. Y. Lim, and G. M. Yang*, "Effect of Growth Conditions on GaN Grown by Lateral Epitaxial Overgrowth", J. Korean Phys. Soc. Vo.38, No.3, pp.242-244 (2001)
2) M. Sentil Kumar, T. H. Kim, S. H. Lee, S. M. Song, J. W. Yang, K. S. Nahm, E.-K. Suh*, “Influence of electric field type on the assembly of single walled carbon nanotubes", Chemical Physics Letters, Vol.383, pp.235-239 (2004)
3) T.S.Jeong, C.J.Youn*, M.S.Han, J.W.Yang, and K.Y.Lim, "Electric field induced quenching effect of Ramann scattering in Mg-doped p-GaN", Applied Phys Lett., vol.83, No.17, pp.3483~3485 (2003)
4) T.S.Jeong*, C.J.Youn, M.S.Han, J.W.Yang, K.Y.Lim, "Analysis of Mg-related emissions in p-GaN grown by MOCVD", J. of Crystal Growth, vol.259, pp.267~272 (2003)
5) C.J.Youn*, T.S.Jeong, M.S.Han, J.W.Yang, K.Y.Lim, H.W.Yu,"Influence of various activation temperatures on the optical degradation of Mg doped InGaN/GaN MQW blue LEDs", J. of Crystal Growth, vol.250, pp.331~338 (2003)
6) M. Sentil Kumar, S. H. Lee, T. Y. Kim, T. H. Kim, S. M. Song, J. W. Yang, K. S. Nahm, E.-K. Suh*, "DC electric field alignment of carbon natubes on metal electrodes", Solid-State Electronics, Vol.47, pp.2075-2080 (2003)
7) T.Y.Kim, S.H.Lee, Y.H.Mo, H.W.Shim, K.S.Nahm*, E.-K.Suh, J.W.Yang, K.Y.Lim, G.S.Park, "Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor", J. of crystal growth, Vol.257, pp.97-103 (2003)
8) Y.H. Song, J.-H. Kim, H.J. Jang, S.R. Joon, J.W. Yang, K.Y. Lim, and G.M. Yang*, "Effect of Al pre-seeded AlN buffer on GaN films grown on Si(111) substrates" , J. of the Korean Physical Society, V.41,6, 880-883 (2002)
9) C.J.Youn*, T.S.Jeong, M.S.Han, J.W.Yang, K.Y.Lim, and H.W.Yu, "Optical Degradation of InGaN/GaN Multi Quantum Well LED Structures Induced by the Mg-Doped p-GaN Activation Temperature", J. of the Korean Physical Society,Vol.41, No.5, pp.778~782 (2002)
10) J. W. Seo, C. S. Oh, H. S. Jeong, J. W. Yang*, C. J. Youn, and K. Y. Lim "UV-Assisted Electrochemicla Oxidation of GaN". J. of the Korean Physical Society,Vol.41, No.6, pp.1017~1020 (2002)
11) J. W. Seo, C. S. Oh, H. S. Jeong, J. W. Yang*, K. Y. Lim, C. J. Youn, and H. J. Lee,“ Bias-Assisted Photoelectrochemcial Oxidation of n-GaN in H2O”, Applied Phys Letters, V.81, 6, 1029-1031 (2002)
12) C. S. Oh, J. W. Seo, J. W. Yang*, H. G. Ahn, J. K. Mun, and H. K. Kim, "Selective Si interdiffusion into ion implanted GaAs from SiN and its application to GaAs MESFET", Electronics Letters, Vol.38, No.9, pp.432-434 (2002)
13) Seong-Ran Jeon, Chang Sok Oh, Jeon-Wook Yang, and Gye Mo Yang*, Byeong-Su Yoo, "GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode", Appl. Phys. Lett., Vol.80, No.11, pp. 1933-1935 (2002)
14) Jae Won Seo, Chang Suck Oh, Jeon Wook Yang*, Chang Ju Youn, Kee Young Lim, and Hyung Jae Lee, "Allowable Substrate Bias for the Etching of n-GaN in Photoenhanced Electrochemical Etching ", Phys. Stat. Sol. (a) Vol.188, 403-406 (2001)
15) J.H.Kang, M.K.Kwon, J.I.Rho, J.W.Yang, K.Y.Lim*, and K.S.Nahm"Growth and Charcaterization of GaN epilayers on Chemically Etched Surface of 3C-SiC Intermediate Layer grown on Si(111) substrate", Phys. Stat. Sol.(a), Vol.188. No.2, pp.527-530 (2001)
16) Jae Won Seo, Chang Suck Oh, Jeon Wook Yang*, Chang Ju Youn, Kee Young Lim, and Hyung Jae Lee, "Photoenhanced Electrochemical Etching of n-GaN Forced by Negative Bias", Jpn. J. Appl. Phys. Vol.40, pp. 1086-1088 (2001)
17) Y. H. Song, J. -H. Kim, H. J. Jang, S. R. Joon, J. W. Yang, K. Y. Lim, and G. M. Yang*, "Effect of Growth Conditions on GaN Grown by Lateral Epitaxial Overgrowth", J. Korean Phys. Soc. Vo.38, No.3, pp.242-244 (2001)